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| PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays in SOT353 package Rev. 02 -- 7 April 2005 Product data sheet 1. Product profile 1.1 General description Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in very small SOT353 (SC-88A) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features s ESD protection of up to four lines s Very low diode capacitance s Low clamping voltage s Ultra low leakage current: IRM = 3 nA s ESD protection up to 12 kV s IEC 61000-4-2; level 4 (ESD) 1.3 Applications s Computers and peripherals s Audio and video equipment s Cellular handsets and accessories s Communication systems s Portable electronics s Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1: Symbol VRWM Quick reference data Parameter reverse stand-off voltage PESD3V3V4UG PESD5V0V4UG Cd diode capacitance PESD3V3V4UG PESD5V0V4UG f = 1 MHz; VR = 0 V; see Figure 5 15 12 18 15 pF pF 3.3 5.0 V V Conditions Min Typ Max Unit Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 2. Pinning information Table 2: Pin 1 2 3 4 5 Pinning Description cathode 1 common anode cathode 2 cathode 3 cathode 4 1 2 3 5 sym050 Simplified outline 5 4 Symbol 1 3 2 4 3. Ordering information Table 3: Ordering information Package Name PESD3V3V4UG PESD5V0V4UG SC-88A Description plastic surface mounted package; 5 leads Version SOT353 Type number 4. Marking Table 4: Marking codes Marking code [1] V1* V2* Type number PESD3V3V4UG PESD5V0V4UG [1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3V4UG PESD5V0V4UG IPP peak pulse current PESD3V3V4UG PESD5V0V4UG 8/20 s [1] [2] Conditions 8/20 s [1] [2] Min - Max 16 16 1.5 1.5 Unit W W A A 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 2 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays Table 5: Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg [1] [2] Parameter junction temperature ambient temperature storage temperature Conditions Min -65 -65 Max 150 +150 +150 Unit C C C Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5; see Figure 1. Measured from pin 1, 3, 4 or 5 to 2. Table 6: Symbol VESD ESD maximum ratings Parameter electrostatic discharge voltage PESD3V3V4UG PESD5V0V4UG PESDxV4UG series HBM MIL-STD-883 Conditions IEC 61000-4-2 (contact discharge) [1] [2] Min Max Unit - 12 12 10 kV kV kV [1] [2] Device stressed with ten non-repetitive ESD pulses; see Figure 2. Measured from pin 1, 3, 4 or 5 to 2. Table 7: Standard ESD standards compliance Conditions > 8 kV (contact) > 4 kV IEC 61000-4-2; level 4 (ESD); see Figure 2 HBM MIL-STD-883; class 3 001aaa631 120 IPP (%) 80 100 % IPP; 8 s 001aaa630 IPP 100 % 90 % e-t 50 % IPP; 20 s 40 10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t 0 Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 3 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 6. Characteristics Table 8: Characteristics Tamb = 25 C unless otherwise specified. Symbol Per diode VRWM reverse stand-off voltage PESD3V3V4UG PESD5V0V4UG IRM reverse leakage current PESD3V3V4UG PESD5V0V4UG VBR breakdown voltage PESD3V3V4UG PESD5V0V4UG Cd diode capacitance PESD3V3V4UG PESD5V0V4UG VCL clamping voltage PESD3V3V4UG PESD5V0V4UG rdif differential resistance PESD3V3V4UG PESD5V0V4UG [1] [2] Parameter Conditions Min Typ Max Unit see Figure 6; VRWM = 3.3 V VRWM = 5.0 V IR = 1 mA 5.3 6.4 f = 1 MHz; see Figure 5; VR = 0 V VR = 3.3 V VR = 0 V VR = 5 V [1] [2] 40 3 5.6 6.8 15 9 12 6 - 3.3 5.0 300 25 5.9 7.2 18 12 15 9 9 11 11 13 200 100 V V nA nA V V pF pF pF pF V V V V - - IPP = 1 A IPP = 2 A IPP = 1 A IPP = 1.7 A IR = 1 mA Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5; see Figure 1. Measured from pin 1, 3, 4 or 5 to 2. 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 4 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 102 006aaa261 1.2 PPP 001aaa633 PPP (W) PPP(25 C) 0.8 10 0.4 1 1 10 102 103 tp (s) 104 0 0 50 100 150 Tj (C) 200 Tamb = 25 C Tamb = 25 C Fig 3. Peak pulse power dissipation as a function of exponential pulse duration tp; typical values 16 Cd (pF) 14 006aaa262 Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 10 006aaa263 IRM at T IRM at 25 C 12 1 (1) 10 8 (2) 6 0 1 2 3 4 VR (V) 5 10-1 -100 -50 0 50 100 Tj (C) 150 f = 1 MHz; Tamb = 25 C (1) PESD3V3V4UG (2) PESD5V0V4UG PESD3V3V4UG PESD5V0V4UG Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 5 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays ESD TESTER RZ CZ 450 RG 223/U 50 coax 4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR 50 IEC 61000-4-2 network CZ = 150 pF; RZ = 330 D.U.T. Device Under Test PESDxV4UG vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div PESD3V3V4UG GND PESD5V0V4UG GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 5 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa264 Fig 7. ESD clamping test set-up and waveforms 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 6 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 7. Application information The PESDxV4UG series is designed for protection of up to four unidirectional data lines from the damage caused by ESD and surge pulses. The PESDxV4UG series may be used on lines where the signal polarities are above or below ground. The PESDxV4UG series provides a surge capability of 16 W per line for an 8/20 s waveform. Data- or transmission lines PESDxV4UG 1 5 1 PESDxV4UG 5 2 n.c. 4 2 3 3 4 Unidirectional protection of 4 lines Bidirectional protection of 3 lines 006aaa018 Fig 8. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxV4UG as close to the input terminal or connector as possible. 2. The path length between the PESDxV4UG and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 7 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 8. Package outline 2.2 1.8 5 4 0.45 0.15 1.1 0.8 2.2 1.35 2.0 1.15 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 04-11-16 Fig 9. Package outline SOT353 (SC-88A) 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 PESD3V3V4UG SOT353 PESD5V0V4UG [1] For further information and the availability of packing methods, see Section 14. -115 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 8 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 10. Revision history Table 10: Revision history Release date Data sheet status Product data sheet Change notice Doc. number 9397 750 14479 Supersedes PESDXV4UG_SER_1 Document ID Modifications: PESDXV4UG_SER_2 20050407 * * * Table 5 PPP and IPP value added Table 8 IRM, VBR, Cd, VCL and rdif adjusted Section 7 PPP value adjusted Objective data sheet 9397 750 13598 - PESDXV4UG_SER_1 20040906 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 9 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14479 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 -- 7 April 2005 10 of 11 Philips Semiconductors PESDxV4UG series Very low capacitance quadruple ESD protection diode arrays 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 7 April 2005 Document number: 9397 750 14479 Published in The Netherlands |
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